Large-area fabrication of high aspect ratio tantalum photonic crystals for high-temperature selective emitters

نویسندگان

  • Veronika Rinnerbauer
  • Sidy Ndao
  • Yi Xiang Yeng
  • Jay J. Senkevich
  • Klavs F. Jensen
  • John D. Joannopoulos
  • Marin Soljačić
  • Ivan Celanovic
  • Robert D. Geil
چکیده

The authors present highly selective emitters based on two-dimensional tantalum (Ta) photonic crystals, fabricated on 2 in. polycrystalline Ta substrates, for high-temperature applications, e.g., thermophotovoltaic energy conversion. In this study, a fabrication route facilitating large-area photonic crystal fabrication with high fabrication uniformity and accuracy, based on interference lithography and reactive ion etching is discussed. A deep reactive ion etch process for Ta was developed using an SF6=C4F8 based Bosch process, which enabled us to achieve 8:5 lm deep cavities with an aspect ratio of 8, with very steep and smooth sidewalls. The thermal emitters fabricated by this method show excellent spectral selectivity, enhancement of the emissivity below cut-off approaching unity, and a sharp cut-off between the high emissivity region and the low emissivity region, while maintaining the low intrinsic emissivity of bare Ta above the cut-off wavelength. The experimental results show excellent agreement with numerical simulations. VC 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4771901]

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تاریخ انتشار 2012